ESTUDIO DE PARÁMETROS MEDIANTE SIMULACIÓN PARA OPTIMIZACIÓN DE UN MESFET DE ZNO (STUDY OF SIMULATING PARAMETERS TO OPTIMIZE A MESFET OF ZNO)
Resumen
En este trabajo se realiza un estudio de los parámetros principales que afectan el desempeño de una unión rectificadora Schottky que es la base del control del canal en un MESFET de ZnO. Los parámetros estudiados son el grosor a, el ancho de compuerta y las distancias de separación entre la compuerta y la fuente , y entre la compuerta y el drenaje . Así como diferentes metales para el contacto rectificador de compuerta, del análisis se encuentra que la estructura de Paladio de 500nm de y con un grosor y una concentración de da , la mejor rectificación y valores de resistencia serie de 0.076 ohms que son característicos de este material.
Palabras Clave: Diseño de dispositivos, física de semiconductores, microelectrónica.
Abstract
In this work is realized a study of the main parameters and the effects of the behavior of a rectifier Schottky junction that is used as a base to channel control of a ZnO MESFET. The parameters considered are thickness a, gate width , and the lengths of the source at gate and gate at drain . Different metals are considered like rectifier contact of the gate, results of the analysis shown that the Palladium structure of 500nm of and 500nm= with thickness and a free carrier density of yield , the best rectification and values of serial resistance of 0.076 Ohms are typical of this material.
Keywords: Device design, microelectronic, physics of semiconductors.
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