ESTUDIO TEÓRICO – EXPERIMENTAL DE PELÍCULAS DE GAN PARA SIMULACIÓN DE DIODO EMISOR DE LUZ (THEORETICAL – EXPERIMENTAL STUDY OF GAN FILMS FOR LIGHT-EMITTING DIODE SIMULATION)
Resumen
Este trabajo presenta el proceso de síntesis de películas de nitruro de galio (GaN) con sitios de nucleación de oro, y la síntesis de películas de GaN tipo p utilizando magnesio, mediante la técnica de depósito por vapor químico (CVD). Con el objetivo de estudiar el crecimiento del semiconductor, se empleó un diseño de experimentos factorial con temperatura, substrato y capa de oro como factores. Los resultados de la caracterización de los materiales de GaN y GaN:Mg fueron obtenidos mediante las técnicas de SEM, XRD, XPS, CL y PL. Con base a lo anterior, la presencia del contaminante Mg en el GaN tipo-p fue demostrada. También, la emisión característica del GaN y GaN:Mg en la región del ultravioleta (UV) y luminiscencia azul (BL) fue analizada. Mediante el estudio del estado del arte de GaN y COMSOL Multiphysics, se obtuvieron los resultados ópticos y eléctricos del diodo electroluminiscente de GaN/GaN:Mg. Como resultado, un voltaje de disparo de , eficiencias interna y luminosa del LED de 84 % y 210.7 lm/W, fueron obtenidos.
Palabras clave: GaN, unión p-n, Simulación COMSOL.
Abstract
The following work presents the synthesis process of gallium nitride films with gold nucleation sites, and the synthesis of p-type magnesium doped GaN films, employing the chemical vapor deposition technique (CVD). The study of semiconductor growth was reached using a factorial design with temperature, substrate and gold films as factors. Wurtzite GaN and GaN:Mg were analyzed through CL, SEM, EDS, PL and XPS characterization results. The presence of Mg in p-GaN was demonstrated by XPS results. Also, the characteristic UVL and BL of GaN and GaN:Mg were analyzed. Electrical and optical results of GaN based electroluminescent diode were obtained from GaN state of the art study and COMSOL Multiphysics with threshold voltage . Internal and luminous efficiencies of the simulated LED with 84 % and 210.7 lm/W, respectively, reported majority contribution of direct recombination in the device.
Keywords: GaN, COMSOL Simulation, p-n junction.
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